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| NTE179 Germanium PNP Transistor Audio Power Amplifier, High Current Switch Description: The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high-current switching applications requiring low saturation voltages, fast switching times, and good safe operating conditions. Features: D Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.5V (Max) @ IC = 5A Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Emitter-Base Volatge, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106W Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W/C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to + 110C Storage Junction Temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to + 110C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8C/W Electrical Characteristics: (TA = +25C unless otherwise noted) Parameter OFF Characteristics Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector-Emitter Cutoff Current V(BR)CBO IC = 100mA, IB = 0 V(BR)EBO IE = 100mA, IC = 0 VCE(sus) ICBO ICEX ICER IC = 5A VCB = 2V, IE = 0 VCE = 90V, VBE(off) = 0.2V VCE = 50V, REB = 100 40 2 40 - - - - - - - - - - - - 200 20 10 V V V A mA mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TA = +25C unless otherwise noted) Parameter ON Characteristics DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Dynamic Characteristics Current Gain-Bandwidth Product fT IC = 500mA, VCE = 10V 500 - - kHz hFE VCE(sat) VBE(on) IC = 1A, VCE = 2V IC = 5A, VCE = 2V IC = 5A, IB = 100mA IC = 1A, VCE = 2V IC = 5A, VCE = 2V 65 55 - - - - - - - - 300 - 0.5 0.45 0.60 V V V Symbol Test Conditions Min Typ Max Unit .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
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